sot223 pnp silicon planar medium power transistor issue 2 ? march 1995 j partmarking detail ? FZT549 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -35 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -35 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -30 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo -0.1 -10 m a m a v cb =-30v v cb =-30v, t amb =100c emitter cut-off current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.50 -0.75 v v i c =-1a, i b =-100ma* i c =-2a, i b -200ma* base-emitter saturation voltage v be(sat) -1.25 v i c =-1a, i b =-100ma* base-emitter turn-on voltage v be(on) -1.0 v i c =-1a, v ce =-2v* static forward current h fe 70 100 80 30 300 i c =-50ma, v ce =-2v i c =-500ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* transition frequency f t 100 mhz i c =-100ma, v ce =-5v, f =100mhz output capacitance c obo 10 pf v cb =-10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fmmt549 datasheet. FZT549 c c e b 3 - 191
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